Features
- Very-low rDS(ON) 45mΩ (typical)
- Ultra-low total gate charge 2.5nC (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
- Radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra-small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
Description
The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
Parameters
| Attributes | Value |
|---|---|
| Rating | Space |
| VDS (V) | 200 |
| IDS (A) | 7.5 |
| VGS(TH) (Max) (V) | 2.5 |
| VGS (Max) (V) | 6 |
| RDSON (Typ) (mΩ) | 45 |
| Qg typ (nC) | 14 |
| Thermal Resistance θJC (°C/W) | 18.7 |
| Temp. Range (°C) | -55 to +125°C |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 75 |
| DSEE (MeV·cm2/mg) | 86 |
| Flow | RH Hermetic |
| Qualification Level | Class Ve, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
Applications
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial
Renesas Boards & Kits
Radiation Hardened ISL70040SEH GaN FET Driver & ISL7002xSEH GaN Power Transistor Evaluation Platform (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode GaN FETs in isolated... Read More
Support Communities
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ISL70024SEH thermal management
Hi, I got a question regarding the thermal resistance(K/W) of the GaN Power Transistor ISL70024SEH. It is stated in the datasheet that the typical thermal resistance from junction to case is 18.7 K/W and it is to my understanding that this value is for ...
Aug 14, 2024
Knowledge Base
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ISL70024SEH / ISL73024SEH Thermal Resistance Junction to Case Top
The Theta-jc (to the package top) is 37C/W.
Sep 18, 2024 -
What are the benefits to selecting GaN FETs over MOSFETs?
Question: What are the benefits to selecting Gallium Nitride (GaN) FETs over MOSFETs? Answer: Higher efficiency due to much lower gate charge and Rdson, and a smaller physical form factor due to the ability to switch at higher frequencies. GaN FETS: ISL70023SEH, ISL70024SEH, ISL73023SEH, ISL73024SEH
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What kind of price premium should I expect for your rad hard GaN FETs vs. other rad hard MOSFETs?
Question: What kind of price premium should I expect? Answer: In comparison to the closest rad hard MOSFET available, expect to pay very similar pricing for a given volume point. GaN FETS: ISL70023SEH, ISL70024SEH, ISL73023SEH, ISL73024SEH
Support Communities
