Features
- Electrically screened to DLA SMD# 5962-95812
- No latch-up, dielectrically isolated device islands
- Pin and functionally compatible with Renesas HS-302RH series analog switches
- Analog signal range equal to the supply voltage range
- Low leakage: 150nA (maximum, post-rad)
- Low rON: 60Ω (maximum, post-rad)
- Low standby supply current: ±150μA (maximum, post-rad)
- Radiation assurance
- High dose rate (50 to 300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si) (Note 1)
- SEE for LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
HS-302AEH Functional Diagram
Description
The HS-302AEH is a dual Double-Pole, Single-Throw (DPST) analog switch fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-302AEH is pin compatible and functionally equivalent to the HS-302RH. The HS-302AEH offers convenient switching controlled by 5V digital inputs and low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current and as over exposure to radiation. The HS-302AEH is available in a 14 Ld CDFP or die form and operates across the extended temperature range of -55°C to +125°C.
Parameters
| Attributes | Value |
|---|---|
| Rating | Space |
| Switches (#) | 2 |
| RON (max) (ohms) | 60 |
| Supply Voltage (min) (V) | -15 - -15 |
| Supply Voltage (max) (V) | 15 - 15 |
| Turn-Off Time (max) (ns) | 500 |
| tOFF (max, post-rad) (ns) | 1000 |
| Turn-On Time (max) (ns) | 500 |
| Temp. Range (°C) | -40 to +85°C, -55 to +125°C |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 50 |
| DSEE (MeV·cm2/mg) | DSEE Free (DI) |
| Flow | RH Hermetic |
| Qualification Level | Class V, EM |
| Die Sale Availability? | Yes |
Applications
- Signal processing applications
- Power supply control
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