Skip to main content
Renesas Electronics Corporation

Features

  • Low on-state resistance
    RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
    RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
    RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)
  • 2.5 V drive available
  • Avalanche capability ratings

Description

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchPch
Channels (#)1
Standard Pkg. TypeTO-252 / DPAK
Gate LevelLogic
VDSS (Max) (V)-20
ID (A)-20
RDS (ON) (Max) @4.5V (mohm)7
Pch (W)36
Ciss (Typical) (pF)4400
Qg typ (nC)57

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZK6 x 6 x 2.653
Part NumberStatusSamplesStockPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
2SJ687-ZK-E1-AYActiveAvailableIn StockMP-3ZK1ku | $0.963#Embossed Tape1YesMALAYSIAJAPAN
2SJ687-ZK-E2-AYObsoleteN/AIn StockMP-3ZK3#Embossed Tape1Yes
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?