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Renesas Electronics Corporation

Features

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
  • Low Ciss: Ciss = 4600 pF TYP.
  • Built-in gate protection diode

Description

Support is limited to customers who have already adopted these products.

The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Part NumberStatusSamplesStockPackageLead Count (#)Pb (Lead) Free
2SJ673-AZObsoleteN/AIn StockMP-45F3#Yes
2SJ673-S12-AZObsoleteN/AOut of StockMP-45F3#Yes
2SJ673(0)-AZObsoleteN/AOut of StockMP-45F3#Yes
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