Power & Power Management

Overview

Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Features

  • Low on-resistance
    RDS(on) = 0.068 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
  • Very low gate charge
    Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25°C)
  • Low leakage current
  • High speed switching
  • Documentation

    Title Type Date
    PDF3.27 MB日本語
    Application Note
    PDF648 KB日本語
    Application Note
    PDF90 KB
    Datasheet

    Design & Development

    Support