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Features

  • Low on-resistance
    RDS(on) = 0.068 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
  • Very low gate charge
    Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25°C)
  • Low leakage current
  • High speed switching

Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Part NumberStatusSamplesStockPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
RJK2076DPA-00#J5ALast Time BuyAvailableIn StockWPAK(3F)1ku | $1.3828#Embossed Tape1YesMalaysiaJapan
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