Overview

Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Features

  • Very low on-resistance
    RDS(on) = 0.038 Ω typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 °C)
  • Low gate charge
    Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 °C)
  • Low leakage current
  • High speed switching

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 90 KB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
3 items

Design & Development

Models