MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
RDS(on) = 0.038 Ω typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 °C)
Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 °C)