Overview

Description

The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2. 5 V drive switching applications.

Features

  • 2.5 V drive available
  • Super low on-state resistance
    RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
    RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)
  • Built-in gate protection diode

Documentation

Type Date
PDF 5.51 MB 日本語 Brochure
PDF 3.23 MB 日本語 Application Note
PDF 648 KB 日本語 Application Note
PDF 225 KB Datasheet
4 items

Design & Development

Models

Support