Features
- Renesas generation 7th Trench IGBT
- Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 200A, VGE = 15V, Tc = 25 °C)
- Moderate speed switching
- Short circuit withstands time (10μs min.)
Description
The RJP1CS28DWS is a 1250V 200A trench insulated-gate bipolar transistor (IGBT) that is available in a Sawn wafer package type.
Applications
- Inverters
Applied Filters: