The RJP1CS27DWS is a 1250V, 150A, trench insulated-gate bipolar transistor (IGBT) with a low collector to emitter saturation voltage. It is available in a Sawn wafer package type.
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
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Carrier Type |
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Sawn |