Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 30A, VGE = 15V, Tc = 25 °C)
- High-Speed switching
- Short circuit withstands time (10μs min.)
Description
The RJP1CS03DWS 1250V, 30A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in a Sawn wafer package type.
Applications
- Inverters
| Part Number | Status | Samples | Stock | RoHS | Package | Pb (Lead) Free |
|---|---|---|---|---|---|---|
| RJP1CS03DWS-80#W0 | Obsolete | N/A | Out of Stock | RoHS:EN RoHS:JA | Sawn | No |