• Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High-Speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 Ω, Ta=25°C , inductive load)
  • Operation frequency (20kHz ≤ f ˂ 40kHz)

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Datasheets & Errata
RJH65T04BDPM-A0 Data Sheet (650V - 30A - IGBT Application: Power Factor Correction circuit) Datasheet PDF 730 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB