Overview

Features

  • Trench gate and thin wafer technology (G8H series)
  • Built in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)
  • Quality grade: Standard
  • High-Speed switching
  • Non-specification for short circuit
  • Applications: UPS, Welding, photovoltaic inverters, Power converter system

Applications

Documentation

Document title Document type
Type
Date Date
PDF 160 KB Datasheet
PDF 648 KB 日本語 Application Note
PDF 506 KB 日本語 Application Note
PDF 941 KB 日本語 Application Note
PDF 1.05 MB 日本語 Application Note
PDF 4.91 MB 日本語 Brochure
PDF 1.92 MB Brochure
PDF 1.32 MB Brochure
8 items

Design & Development

Models

Support