• Trench gate and thin wafer technology (G8H series)
  • Built in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
  • Quality grade: Standard
  • High-Speed switching
  • Non-specification for short circuit
  • Applications: UPS, Welding, photovoltaic inverters, Power converter system


Title language Type Format File Size Date
star RBN40H65T1FPQ-A0 Datasheet Datasheet PDF 309 KB
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Analog ICs Brochure 日本語 Brochure PDF 2.72 MB
Discrete & Power Devices Brochure Brochure PDF 1.92 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB