Features

  • Trench gate and thin wafer technology (G8H series)
  • Built in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
  • Quality grade: Standard
  • High-Speed switching
  • Short circuit withstands time (10 µs min.)
  • Applications: UPS, Welding, photovoltaic inverters, Power converter system

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
Active TO-247A Tube
Availability

Documentation

Title language Type Format File Size Date
Datasheets & Errata
RBN40H125S1FPQ-A0 Datasheet Datasheet PDF 178 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB