Dual-Phase EVB with 18V to 80V Input Range, 12V 20A Output
The ISL81806EVAL1Z dual-phase evaluation board features the ISL81806, an 80V high voltage dual synchronous buck controller optimized for E-mode GaN FETs, with external...
Wide bandgap semiconductor technologies, such as Gallium Nitride Field Effect Transistors (GaN FETs), are used in various power management applications, including high-power motor drives, fast charging adapters, telecom, computing, and even space applications. Renesas provides a range of controllers and drivers specifically designed to harness the advantages of GaN FETs compared to Si FETs.
To facilitate the selection process between GaN and Si FETs, Renesas offers pin-to-pin compatible products that can drive both types of FETs for easy comparison.
|Brochure||PDF 5.51 MB 日本語|
|White Paper||PDF 470 KB 日本語|
|White Paper||PDF 548 KB|
An overview of the industry’s first high-performance 80V dual-phase buck and boost controllers optimized to drive GaN FETs. With high efficiency, tight load regulation and current sharing, these devices deliver ideal power solutions for industrial automation, telecommunications, medical and automotive applications.