Robust Solutions with High Power Density for a Range of Applications
Renesas GaN FET Drivers are designed to drive gallium nitride (GaN) FETs in isolated and non-isolated topologies for both commercial and rad-hard systems.
Highly Integrated
Features both high- and low-side drivers, optimized for HB and FB topologies, minimizing component count.
Optimized for GaN
Innovative technology minimizes losses, enhances efficiency, and ensures robust design for GaN devices.
Ecosystem Design
Renesas' total solution, featuring PWM and SR controllers, leverages advanced power-saving technology to enable green power designs.
Enabling Technologies
Support
Support Communities
Get quick technical support online from Renesas Engineering Community technical staff.
Knowledge Base
Browse our knowledge base for helpful articles, FAQs, and other useful resources.