Skip to main content

Renesas GaN FET Drivers are designed to drive gallium nitride (GaN) FETs in isolated and non-isolated topologies for both commercial and rad-hard systems.

Highly Integrated

Highly Integrated

Features both high- and low-side drivers, optimized for HB and FB topologies, minimizing component count.

Optimized for GaN

Optimized for GaN

Innovative technology minimizes losses, enhances efficiency, and ensures robust design for GaN devices.

Ecosystem Design

Ecosystem Design

Renesas' total solution, featuring PWM and SR controllers, leverages advanced power-saving technology to enable green power designs.

Enabling Technologies

Support

Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.