The µPD166035 is an N-channel high side driver with built-in charge pump and embedded protection function. When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent destruction and degradation of the product, and also outputs self-diagnostic signal.

Features

  • High temperature operation (Tch = 175°C MAX.)
  • Built-in charge pump circuit
  • Low on-state resistance
    • RDS(ON) = 80 mW MAX. (VIN = VIH, IO = 1.5A, Tch = 25°C)
  • Built-in protection circuit
    • Current limitation
    • Overtemperature protection
  • Active clamp operation at inductive load switch off
  • Built-in diagnostic function
  • Package: Power SOP 8

descriptionDocumentation

Title language Type Format File Size Date
star UPD166035GR Data Sheet 日本語 Datasheet PDF 527 KB
Product Scout Automotive Brochure PDF 3.25 MB
PowerMOSFET & IPD Brochure PDF 2.24 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 Product Change Notice PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E ) 日本語 Product Change Notice PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E ) 日本語 Product Change Notice PDF 1.46 MB

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