概要

説明

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.

特長

  • Electrically screened to DSCC SMD # 5962-01509
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
    • High Dose Rate: 300krad(SI) (Max)
    • Low Dose Rate: 50krad(SI) (Max)
    • SEL immune: Dielectrically isolated
    • SEU immune: 35MeV/mg/cm2
    • SEU cross-section at 89MeV/mg/cm2: 5x10-6cm2
  • Low start-up current: 100µA (Typ)
  • Fast propagation delay: 80ns (Typ)
  • Supply voltage range: 12V to 20V
  • High output drive: 1A (Peak, Typ)
  • Undervoltage lockout: 8.8V start (Typ), 8.2V stop (Typ)

アプリケーション

アプリケーション

  • Current-mode switching power supplies
  • Control of high current FET drivers
  • Motor speed and direction control

ドキュメント

Document title Document type
分類
日付 日付
PDF 245 KB データシート
PDF 414 KB アプリケーションノート
PDF 338 KB アプリケーションノート
PDF 467 KB カタログ
PDF 4.85 MB カタログ
その他資料
PDF 360 KB Price Increase Notice
PDF 329 KB レポート
PDF 370 KB レポート
PDF 118 KB レポート
PDF 141 KB 技術概要
PDF 533 KB ホワイトペーパー
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設計・開発

モデル