パワーマネジメント

ルネサスのGaN FETドライバは、絶縁型および非絶縁型のトポロジでエンハンスメントモードの窒化ガリウム（GaN）FETを駆動するように開発されています。

セレクションテーブル

    Processing table
    Output Type
    Supply Voltage (V)
    Gate Drive (V)
    ISOURCE (Max) (mA)
    ISINK (Max) (mA)
    Turn-Off Prop Delay (ns)
    Turn-On Prop Delay (ns)
    Lead Count (#)
    Pkg. Type
    型名
    RAA226110
    Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection    		 Low Side 6.5 - 18 5.8 2000 3000 20 20 16 QFN
    Parametric Table tips

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