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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:PDIP
Pkg. Code:EWS
Lead Count (#):28
Pkg. Dimensions (mm):35.6 x 14.0 x 4.06
Pitch (mm):2.5

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)Not Applicable
RoHS (X28HC256PIZ-12)ダウンロード
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

製品スペック

Carrier TypeTube
Moisture Sensitivity Level (MSL)Not Applicable
Country of AssemblyPHILIPPINES, USA, TAIWAN
Country of Wafer FabricationUSA
Access Time (ns)120
Family NameByte Alterable EEPROM
InterfaceParallel
Lead Count (#)28
Length (mm)35.6
MOQ312
Memory Capacity (kbit)256
Organization (bit)x 8
Organization (kword)32
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Pitch (mm)2.5
Pkg. Dimensions (mm)35.6 x 14.0 x 4.06
Pkg. TypePDIP
Price (USD)$60.82314
Supply Voltage (V)4.5 - 5.5
Temp. Range (°C)-40 to +85°C
Thickness (mm)4.06
Width (mm)14

説明

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100, 000 write cycles per byte and an inherent data retention of 100 years