特長
- Access Time: 90ns
- Simple Byte and Page Write
- Single 5V supply
- No external high voltages or VPP control circuits
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
- Low Power CMOS
- Active: 50mA
- Standby: 500µA
- Software Data Protection
- Protects data against system level inadvertent writes
- High Speed Page Write Capability
- Highly Reliable Direct Write™ Cell
- Endurance: 100,000 write cycles
- Data retention: 100 years
- Early end of write detection
- DATA polling
- Toggle bit polling
- Two PLCC and LCC Pinouts
- X28C512
- X28C010 EPROM pin compatible
- X28C513
- Compatible with lower density EEPROMs
- Pb-Free Plus Anneal Available (RoHS Compliant)
説明
Support is limited to customers who have already adopted these products.
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS. The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle and enabling the entire memory to be written in less than 2. 5 seconds. The X28C512, X28C513 also feature DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early completion of a write cycle. In addition, the X28C512, X28C513 support the software data protection option.
