100V GaN FET評価ボード付き耐放射線特性ドライバGaNパワーステージ
ISL73033SLHEV1Z評価ボードはISL73033SLH 耐放射線ドライバGaNパワーステージの性能を評価するために用いられます。 ISL73033SLHは4.5Vゲートドライバと100V、7.5mΩエンハンスメントモードの窒化ガリウムFET（eGaN FET）を8mm x 8mmの単一BGAパッケージに統合されています。...
主要ドキュメント:
概要
説明
The ISL73033SLHM is a radiation hardened 100V Gallium Nitride (GaN) FET with an integrated low-side GaN FET driver. The GaN FET are capable of providing up to 45A output and have an RDSON as low as 7.5mΩ. The integrated low-side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of the supply voltage. The ISL73033SLHM has a propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55 °C to +125 °C and receives screening similar to QMLV devices. The device is offered in an 81-lead Ball Grid Array (BGA) plastic package.
特長
- Production testing and qualification follow AS6294/1
- 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
- Wide driver bias range of 4.5V to 13.2V
- Up to 16.5V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Integrated driver optimized for enhancement-mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Full military temperature range operation
- TA = -55 °C to +125 °C
- TJ = -55 °C to +150 °C
- Radiation hardness assurance (lot-by-lot)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness for Driver (see the SEE test report)
- No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
- No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
- SEE hardness for GaN FET (see the SEE test report)
- No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg
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Processing table
| FBGA | 81 | Tray | 3 | Yes | Pb-Free Ball Terminal (SAC-Q)-e6 | 25 |
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| 中高度地球軌道／静止軌道の人工衛星向け、高信頼性かつ小型／軽量／低コストの耐放射線プラスチックパッケージ製品を拡充 | ニュース | 2021年7月15日 |