特長
- Dual independent MOSFET driver suitable for multi-phase DC/DC applications
- Dual MOSFET drives for synchronous rectified bridge
- Advanced adaptive zero shoot-through protection
- Low standby bias current
- 36V internal bootstrap switcher
- Bootstrap capacitor overcharging prevention
- Integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt
- Pre-POR overvoltage protection for start-up and shutdown
- Power rail undervoltage protection
- Expandable bottom copper pad for enhanced heat sinking
- Thin Dual Flat No-lead (TDFN) package
- Near chip-scale package footprint; improves PCB efficiency and thinner in profile
- Pb-free (RoHS compliant)
説明
The RAA220002 is a dual high frequency MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. The RAA220002's upper and lower gates are both driven to an externally applied voltage, which provides the ability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The RAA220002 has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. The RAA220002's overvoltage protection feature is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) through a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This is dependent on the current being shunted, which provides some protection to the load if the upper MOSFET(s) becomes shorted.
パラメータ
| 属性 | 値 |
|---|---|
| Qualification Level | Standard |
| Temp. Range (°C) | -40 to +85°C |
パッケージオプション
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| TDFN | 3.0 x 3.0 x 0.75 | 12 | 0.4 |
