パッケージ情報
| Pkg. Code | pkg_474 |
| Lead Count (#) | 36 |
| Pkg. Type | SOJ |
| Pkg. Dimensions (mm) | 23.39 x 10.16 x 3.55 |
環境及び輸出分類情報
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.32.0041 |
| RoHS (R1RW0408DGE-2PR#B1) | 英語日本語 |
| Pb (Lead) Free | Yes |
製品スペック
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 3 |
| Price (USD) | 1ku | 4.9905 |
| Access Time (ns) | 12 |
| Bus Width (bits) | 8 |
| Core Voltage (V) | 3.3 |
| Density (Kb) | 4096 |
| I/O Voltage (V) | 3.3 - |
| Lead Compliant | Yes |
| Lead Count (#) | 36 |
| Length (mm) | 23 |
| MOQ | 1 |
| Memory Capacity (kbit) | 4000 |
| Organization | 512K x 8 |
| Organization (bit) | x 8 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 23 x 10 x 3.55 |
| Pkg. Type | SOJ |
| Remarks | Contact us for Successor Products information. |
| Supply Voltage (V) | 3.0 - 3.6 |
| Tape & Reel | No |
| Thickness (mm) | 3.55 |
| Width (mm) | 10 |
R1RW0408D-R に関するリソース
説明
The R1RW0408D is a 4Mbit high-speed static RAM organized as 512-kword × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high-density surface mounting.