概要
説明
The R1RW0408D is a 4Mbit high-speed static RAM organized as 512-kword × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high-density surface mounting.
特長
- Single supply: 3.3V ± 0.3V
- Access time: 10ns /12ns (max)
- Completely static memory: No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible: All inputs and outputs
- Operating current: 115mA/100mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max), 0.8 mA (max) (L-version)
- Data retention current: 0.4mA (max) (L-version)
- Data retention voltage: 2V (min) (L-version)
- Center VCC and VSS type pinout
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| 分類 | タイトル | 日時 |
| データシート | PDF 484 KB English | |
| ガイド | PDF 284 KB English | |
| ガイド | PDF 1.31 MB English | |
| 製品別信頼性資料 | PDF 202 KB | |
| 製品別信頼性資料 | PDF 202 KB | |
| 製品変更通知 | PDF 1.37 MB English | |
| 製品変更通知 | PDF 1.54 MB English | |
| パッケージ外形図 | PDF 21 KB | |
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