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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です
4M High-Speed SRAM (256-kword × 16-bit)

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:SOJ
Pkg. Code:pkg_475
Lead Count (#):44
Pkg. Dimensions (mm):28 x 10 x 3.55
Pitch (mm):1.27

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

製品スペック

Carrier TypeTube
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)12
Bus Width (bits)16
Core Voltage (V)5V
Density (Kb)4096
I/O Voltage (V)5
Lead CompliantYes
Lead Count (#)44
Length (mm)28
MOQ1
Memory Capacity (kbit)4000
Organization256K x 16
Organization (bit)x 16
Pb (Lead) FreeYes
Pkg. Dimensions (mm)28 x 10 x 3.55
Pkg. TypeSOJ
Price (USD)$6.1887
RemarksContact us for Successor Products information.
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Thickness (mm)3.55
Width (mm)10

説明

The R1RP0416D Series is a 4Mbit high-speed static RAM organized as 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in a 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.