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270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8Gbps CPRI, 10G Ethernet Application

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

環境及び輸出分類情報

RoHS (NX6353EP35-AZ)英語日本語
Moisture Sensitivity Level (MSL)
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

製品スペック

Ith (Typical) (mA)7
Lead CompliantNo
MOQ500
Pb (Lead) FreeYes
Pf / Po (Min) (mW)8.5
RemarksFL=6.2mm, λp=1270nm, 1290nm, 1310nm, 1330nm, 1350nm
Tape & ReelNo
Target applications9.8G CPRI/10G ETHERNET
Tstg (Max) (°C)95
Tstg (Min) (°C)-40
Λp (Typical) for BD (nm)1310

説明

The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.