特長
- Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A)
- High current rating: ID(DC) = ∓83 A
説明
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
パラメータ
| 属性 | 値 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Gate Level | Logic |
| VDSS (Max) (V) | -60 |
| ID (A) | -83 |
| RDS (ON) (Max) @10V (mohm) | 8.8 |
| RDS (ON) (Max) @4.5V (mohm) | 12 |
| Pch (W) | 150 |
| Ciss (Typical) (pF) | 10100 |
| Qg typ (nC) | 190 |
| Series Name | NP Series |
パッケージオプション
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZP | 10 x 9 x 4.9 | 3 |
適用されたフィルター