特長
- Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
- Low Ciss Ciss = 5700 pF TYP.
説明
Support is limited to customers who have already adopted these products.
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
適用されたフィルター