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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です

特長

  • Super low on-state resistance RDS(on)1 = 70 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 95 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
  • Low input capacitance Ciss = 1100 pF TYP.
  • Built-in gate protection diode

説明

The NP15P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

パラメータ

属性
Qualification LevelAutomotive
Nch/PchPch
Channels (#)1
Standard Pkg. TypeTO-252 / DPAK
Gate LevelLogic
VDSS (Max) (V)-60
ID (A)-15
RDS (ON) (Max) @10V (mohm)70
RDS (ON) (Max) @4.5V (mohm)95
Pch (W)30
Ciss (Typical) (pF)1100
Qg typ (nC)23
Series NameNP Series

パッケージオプション

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZK6 x 6 x 2.653
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP15P06SLG-E1-AYActiveAvailableIn StockContactMP-3ZK1ku | $0.5073#Embossed Tape1YesMALAYSIAJAPAN
NP15P06SLG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-3ZK3#Embossed Tape1Yes