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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:CLCC
Pkg. Code:JSE
Lead Count (#):8
Pkg. Dimensions (mm):6.0 x 6.0 x 1.78
Pitch (mm):1.4

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)Not Applicable
Pb (Lead) FreeExempt
ECCN (US)EAR99
HTS (US)8542.39.0090

製品スペック

Lead Count (#)8
Carrier TypeTray
Moisture Sensitivity Level (MSL)Not Applicable
Pitch (mm)1.4
Pkg. Dimensions (mm)6.0 x 6.0 x 1.78
Qualification LevelEM
Pb (Lead) FreeExempt
Pb Free CategoryGold Plate over compliant Undercoat-e4
MOQ1
Temp. Range (°C)-55 to +125°C
CAGE code34371
DSEE (MeV·cm2/mg)86
Die Sale Availability?Yes
Driver TypeLow Side
Drivers (#)1
FET TypeGaNFET
Fall Time7.5
FlowRH Hermetic
Gate Drive (V)4.5
Input VCC (Max) (V)13.2
Input VCC (Min) (V)4.5
Length (mm)6
Low Side Fall Time (max) (ns)50
Low Side Rise Time (max) (ns)90
Models AvailablePSPICE, ISIM
Output TypeInverting/Non-inverting
PROTO Availability?Yes
Peak Output Sink Current (A)2.8
Peak Output Source Current (A)1.5
Peak Sink Current (A)4
Peak Source Current (A)3
Pkg. TypeCLCC
RatingSpace
Rise Time (Max)12.5
SMD URL5962-17233
Supply Voltage (V)4.5 - 13.2
TID LDR (krad(Si))75
Thickness (mm)1.78
Turn-On Prop Delay (ns)40
Width (mm)6

説明

The ISL73040SEH is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. The device has a 4.5V gate drive voltage (VDRV) generated using an internal regulator, which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL73040SEH's input can withstand voltages up to 14.7V regardless of the VDD voltage, allowing it to be connected directly to most PWM controllers. The ISL73040SEH's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The device operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.