パッケージ情報
| CADモデル: | View CAD Model |
| Pkg. Type: | SOICN |
| Pkg. Code: | MBY |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 4.9 x 3.9 x 0.00 |
| Pitch (mm): | 1.3 |
環境及び輸出分類情報
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.39.0090 |
| RoHS (ISL2110ABZ) | ダウンロード |
製品スペック
| Lead Count (#) | 8 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 1 |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 4.9 x 3.9 x 0.00 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range (°C) | -40 to +125°C |
| Bootstrap Supply Voltage (Max) (V) | 114 |
| Charge Pump | No |
| Fall Time | 7.5 |
| Input Logic Level | CMOS |
| Length (mm) | 4.9 |
| MOQ | 980 |
| Parametric Category | Half-Bridge FET Drivers |
| Peak Pull-down Current (A) | 4 |
| Peak Pull-up Current (A) | 3 |
| Pkg. Type | SOICN |
| Qualification Level | Standard |
| Rise Time (μs) | 0.009 |
| Turn-Off Prop Delay (ns) | 32 |
| Turn-On Prop Delay (ns) | 38 |
| VBIAS (Max) (V) | 14 |
| Width (mm) | 3.9 |
ISL2110 に関するリソース
説明
The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDD supply rail.