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特長

  • Includes controllable Dual R/W SRAM buffers for maximum flexibility
  • Standard block architecture with added 256-byte page erase for energy efficient Data Logging
  • Byte-write provides Serial EEPROM functionality in a Serial NOR Flash device
  • Ultra-deep power down
  • Comprehensive security and unique ID features protect the device from outside tampering

説明

The AT45DB161E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

パラメータ

属性
Memory ClassDataFlash
Memory Density16
Operating Voltage Range (V)2.3 - 3.6
Speed85 MHz
InterfaceSingle SPI
Temp. Range (°C)-40 to +85°C
Deep Power Down (µA)0.4
Read Current (mA)6
Key BenefitIncludes controllable SRAM

パッケージオプション

Pkg. TypePkg. Dimensions (mm)Pitch (mm)
11-WLCSP
DFN5 x 61.27
SOIC-L3.81 x 4.801.27
SOIC-N3.81 x 4.801.27
SOIC-W5.18 x 7.701.27

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