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3.3V 128K x 36 Synchronous Flowthrough SRAM with 3.3V I/O

パッケージ情報

Lead Count (#) 165
Pkg. Code BQG165
Pitch (mm) 1
Pkg. Type CABGA
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2

環境及び輸出分類情報

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

製品スペック

Lead Count (#) 165
Pb (Lead) Free Yes
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Architecture Synch Burst
Bus Width (bits) 36
Core Voltage (V) 3.3
Density (Kb) 4608
I/O Voltage (V) 3.3 - 3.3
Length (mm) 15.0
MOQ 2000
Organization 128K x 36
Output Type Flowthrough
Package Area (mm²) 195.0
Pb Free Category e1 SnAgCu
Pitch (mm) 1.0
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2
Pkg. Type CABGA
Qty. per Carrier (#) 0
Qty. per Reel (#) 2000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range 0 to 70°C
Thickness (mm) 1.2
Width (mm) 13.0

説明

The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.