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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
3.3V 128K x 36 Synchronous Flowthrough SRAM with 3.3V I/O

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:PBGA
Pkg. Code:BGG119
Lead Count (#):119
Pkg. Dimensions (mm):14.0 x 22.0 x 2.15
Pitch (mm):1.27

環境及び輸出分類情報

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

製品スペック

Lead Count (#)119
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Voltage (V)3.3 - 3.3
Length (mm)14
MOQ168
Organization128K x 36
Output TypeFlowthrough
Package Area (mm²)308
Pb Free Categorye1 SnAgCu
Pitch (mm)1.27
Pkg. Dimensions (mm)14.0 x 22.0 x 2.15
Pkg. TypePBGA
Price (USD)$7.78911
Qty. per Carrier (#)84
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)2.15
Width (mm)22
掲載No

説明

The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.