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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です
3.3V 128K x 36 Synchronous Flowthrough SRAM with 3.3V I/O

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:PBGA
Pkg. Code:BG119
Lead Count (#):119
Pkg. Dimensions (mm):14.0 x 22.0 x 2.15
Pitch (mm):1.27

環境及び輸出分類情報

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

製品スペック

Lead Count (#)119
Pb (Lead) FreeNo
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Voltage (V)3.3 - 3.3
Length (mm)14
MOQ1000
Organization128K x 36
Output TypeFlowthrough
Package Area (mm²)308
Pb Free Categorye0
Pitch (mm)1.27
Pkg. Dimensions (mm)14.0 x 22.0 x 2.15
Pkg. TypePBGA
Price (USD)$7.08488
Qty. per Carrier (#)0
Qty. per Reel (#)1000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)0 to 70°C
Thickness (mm)2.15
Width (mm)22

説明

The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.