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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQG165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

環境及び輸出分類情報

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

製品スペック

Lead Count (#)165
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Frequency (MHz)183 - 183
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ136
Organization128K x 36
Output TypePipelined
Package Area (mm²)195
Pb Free Categorye1 SnAgCu
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Price (USD)$10.00801
Qty. per Carrier (#)136
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)1.2
Width (mm)13

説明

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.