パッケージ情報
| Lead Count (#) | 100 |
| Pkg. Code | PKG100 |
| Pitch (mm) | 0.65 |
| Pkg. Type | TQFP |
| Pkg. Dimensions (mm) | 20.0 x 14.0 x 1.4 |
環境及び輸出分類情報
| Pb (Lead) Free | Yes |
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.32.0041 |
製品スペック
| Lead Count (#) | 100 |
| Pb (Lead) Free | Yes |
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | Taiwan |
| Country of Wafer Fabrication | Taiwan, United States |
| Architecture | Synch Burst |
| Bus Width (bits) | 36 |
| Core Voltage (V) | 3.3 |
| Density (Kb) | 4608 |
| I/O Frequency (MHz) | 1 - 1 |
| I/O Voltage (V) | 3.3 - 3.3 |
| Length (mm) | 20.0 |
| MOQ | 144 |
| Organization | 128K x 36 |
| Output Type | Pipelined |
| Package Area (mm²) | 280.0 |
| Pb Free Category | e3 Sn |
| Pitch (mm) | 0.65 |
| Pkg. Dimensions (mm) | 20.0 x 14.0 x 1.4 |
| Pkg. Type | TQFP |
| Qty. per Carrier (#) | 72 |
| Qty. per Reel (#) | 0 |
| Requires Terms and Conditions | Does not require acceptance of Terms and Conditions |
| Tape & Reel | No |
| Temp. Range | -40 to 85°C |
| Thickness (mm) | 1.4 |
| Width (mm) | 14.0 |
71V3576 に関するリソース
説明
The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.