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128K x 18 3.3V Dual-Port RAM, Interleaved I/Os

パッケージ情報

Lead Count (#) 256
Pkg. Code BC256
Pitch (mm) 1
Pkg. Type CABGA
Pkg. Dimensions (mm) 17.0 x 17.0 x 1.4

環境及び輸出分類情報

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 4
ECCN (US) NLR
HTS (US) 8542320041

製品スペック

Lead Count (#) 256
Pb (Lead) Free No
Carrier Type Tray
Moisture Sensitivity Level (MSL) 4
Country of Assembly Philippines
Country of Wafer Fabrication Taiwan, United States
Price (USD) | 1ku 177.50667
Access Time (ns) 12
Architecture Dual-Port
Bus Width (bits) 18
Core Voltage (V) 3.3
Density (Kb) 2304
Function Busy, Interrupt, JTAG, Master, Slave
I/O Type 3.3 V LVTTL
Interface Async
Length (mm) 17
MOQ 24
Organization 128K x 18
Package Area (mm²) 289.0
Pb Free Category e0
Pitch (mm) 1
Pkg. Dimensions (mm) 17.0 x 17.0 x 1.4
Pkg. Type CABGA
Qty. per Carrier (#) 90
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range -40 to 85°C
Thickness (mm) 1.4
Width (mm) 17

説明

The 70V639 is a high-speed 128K x 18 asynchronous dual-port static RAM designed to be used as a stand-alone dual-port RAM or as a combination Master/Slave dual-port RAM for 36-bit or more word systems. Using the Master/Slave dual-port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power-down feature controlled by the chip enables (either CE0 or CE1) permits the on-chip circuitry of each port to enter a very low standby power mode.