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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です

特長

  • Dual MOSFET drives for synchronous rectified bridge
  • Advanced adaptive zero shoot-through protection
  • PHASE detection
  • LGATE detection
  • Auto-Zero of rDS(ON) conduction offset effect
  • Low standby bias current
  • 36V internal bootstrap switcher
  • Bootstrap capacitor overcharging prevention
  • Integrated high-side gate-to-source resistor to prevent from self turn-on due to high input bus dV/dt
  • Pre-POR overvoltage protection for start-up and shutdown
  • Power rails undervoltage protection
  • Expandable bottom copper pad for enhanced heat sinking
  • Dual flat no-lead (DFN) package
  • Near chip-scale package footprint; improves PCB efficiency and thinner in profile
  • Pb-Free (RoHS compliant)

説明

The ISL6625A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. In ISL6625A, the upper and lower gates are both driven to an externally applied voltage. This provides the capability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6625A has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature, which is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) via a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.

パラメータ

属性
Temp. Range (°C)0 to +70°C
Qualification LevelStandard

パッケージオプション

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
DFN2.0 x 2.0 x 0.908

アプリケーション

  • High light load efficiency voltage regulators
  • Core regulators for advanced microprocessors
  • High current DC/DC converters
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreePb Free CategoryTemp. Range (°C)Country of AssemblyCountry of Wafer Fabrication
ISL6625ACRZ-TActiveAvailableIn StockRoHS:EN
DFN1ku | $1.068#Reel3YesPb-Free 100% Matte Tin Plate w/Anneal-e30 to +70°CMALAYSIATAIWAN
ISL6625ACRZ-TKActiveAvailableOut of StockRoHS:EN
DFN1ku | $1.068#Reel3YesPb-Free 100% Matte Tin Plate w/Anneal-e30 to +70°CMALAYSIATAIWAN
ISL6625AIRZ-TObsoleteN/AOut of StockRoHS:EN
DFN8#Reel3YesPb-Free 100% Matte Tin Plate w/Anneal-e3-40 to +85°C
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