概要
説明
The ISL70040SEHEV2Z evaluation platform evaluates the ISL70040SEH alongside the ISL70023SEH. The same board can be used to evaluate the ISL73040SEH alongside the ISL73023SEH, which are the same die offered with different radiation assurance screening.
The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. It operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gate drive within a single device.
The ISL70040SEH has a 4.5V gate drive voltage (VDRV) that is generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH inputs can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the ISL70040SEH inputs to be connected directly to most PWM controllers. The split outputs of the ISL70040SEH offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths.
The ISL70023SEH is a 100V N-channel enhancement mode GaN power transistor. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low r DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.
特長
- Wide VDD range single
- 4.5V to 13.2V
- Location provided for load resistors to switch the GaN FET with a load
- SMA connector on the gate drive voltage to analyze the gate waveforms
- Drain/Source sense test points to analyze the drain to source waveforms
- Banana jack connectors for power supplies and drain/source connections
アプリケーション
ドキュメント
|
|
|
---|---|---|
分類 | タイトル | 日時 |
マニュアル-開発ツール | PDF 1.74 MB | |
データシート | PDF 521 KB | |
レポート | PDF 433 KB | |
レポート | PDF 368 KB | |
データシート | PDF 1.08 MB | |
レポート | PDF 251 KB | |
6件
|
設計・開発
サポート
ビデオ&トレーニング
Renesas, a leading solution provider in the satellite and high-reliability industry, introduces its Gallium Nitride (GaN) technology with the ISL70024SEH and ISL70040SEH. Designed specifically for space applications, it delivers reliable performance under total ionizing dose (TID) and heavy ion exposure. Paired with a Renesas GaN driver and FET, it enables more efficient switching, higher frequency operation, reduced gate drive voltage, and a smaller solution size compared to traditional silicon devices.
Related Resources