Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community
N-Channel Mos Field Effect Transistor For Switching

Package Information

CAD Model:View CAD Model
Pkg. Type:EFLIP(LGA)
Pkg. Code:pkg_7580
Lead Count (#):4
Pkg. Dimensions (mm):2 x 2 x 0.25
Pitch (mm):

Environmental & Export Classifications

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)1
ECCN (US)
HTS (US)

Product Attributes

Lead Count (#)4
Carrier TypeEmbossed Tape
Pb (Lead) FreeYes
ApplicationIndustrial, Consumer Use
Channels (#)2
Ciss (Typical) (pF)523
ID (A)5.7
Lead CompliantYes
Length (mm)2
MOQ5000
Moisture Sensitivity Level (MSL)1
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)1.3
Pkg. Dimensions (mm)2 x 2 x 0.25
Pkg. TypeEFLIP(LGA)
Qg typ (nC)7.1
Qualification LevelIndustrial
RDS (ON) (Max) @2.5V or 1.8V (mohm)64
RDS (ON) (Max) @4.5V (mohm)40
Tape & ReelNo
Thickness (mm)0.25
VDSS (Max) (V)30
VGSS (V)12
Vgs (off) (Max) (V)1.5
Width (mm)2

Description

The UPA2351T1G is a N-Channel Mos Field Effect Transistor For Switching.