Features
- Ultra‑fast switching Gen IV Plus GaN
- JEDEC‑qualified GaN technology
- Robust design with defined transient over‑voltage capability
- Compatible with E‑mode gate drivers; no Zener protection required
- Extremely low crossover loss
- Negligible Qrr
- RoHS‑compliant, halogen‑free packaging
- Low reverse‑conduction drop (VSD)
Description
The TP70H135G4PLSGB 700V, 135mΩ gallium nitride (GaN) FET is a normally‑off device built on Renesas' Gen IV Plus platform. It combines a state‑of‑the‑art high‑voltage GaN high electron mobility transistor (HEMT) with a low‑voltage silicon MOSFET to deliver superior performance, standard gate‑drive compatibility, ease of adoption, and high reliability.
The Gen IV Plus SuperGaN® platform uses advanced epitaxial and patented device technologies to simplify manufacturability while improving efficiency through lower gate charge, reduced output capacitance, minimized crossover loss, and lower reverse‑recovery charge.
Parameters
| Attributes | Value |
|---|---|
| Blocking Capability | Uni-Directional Switch |
| Qualification Level | Standard |
| Vds min (V) | 700 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 135 |
| RDSON (max) (mΩ) | 169 |
| Vth typ (V) | 2 |
| Id max @ 25°C (A) | 16 |
| Qg typ (nC) | 5.9 |
| Qoss (nC) | 29.4 |
| Ron * Qoss (FOM) | 3969 |
| Ciss (Typical) (pF) | 485 |
| Coss (Typical) (pF) | 29.5 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type |
|---|
| PQFN88, IP |
Applications
- Consumer
- Power Adapters
- Low Power SMPS
- Lighting