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Features

  • Ultra‑fast switching Gen IV Plus GaN
  • JEDEC‑qualified GaN technology
  • Robust design with defined transient over‑voltage capability
  • Compatible with E‑mode gate drivers; no Zener protection required
  • Extremely low crossover loss
  • Negligible Qrr
  • RoHS‑compliant, halogen‑free packaging
  • Low reverse‑conduction drop (VSD)

Description

The TP70H130G4PPS 700V, 130mΩ gallium nitride (GaN) FET is a normally‑off device built on Renesas' Gen IV Plus platform. It combines a state‑of‑the‑art high‑voltage GaN high electron mobility transistor (HEMT) with a low‑voltage silicon MOSFET to deliver superior performance, standard gate‑drive compatibility, ease of adoption, and high reliability.

The Gen IV Plus SuperGaN® platform uses advanced epitaxial and patented device technologies to simplify manufacturability while improving efficiency through lower gate charge, reduced output capacitance, minimized crossover loss, and lower reverse‑recovery charge.

Parameters

AttributesValue
Blocking CapabilityUni-Directional Switch
Qualification LevelStandard
Vds min (V)700
V(TR)DSS max (V)800
RDSON (Typ) (mΩ)130
RDSON (max) (mΩ)163
Vth typ (V)4
Id max @ 25°C (A)16
Qg typ (nC)10.7
Qoss (nC)29.2
Ron * Qoss (FOM)3796
Ciss (Typical) (pF)567
Coss (Typical) (pF)28
Mounting TypeSurface Mount
Temp. Range (°C)-55 to +150°C

Package Options

Pkg. Type
TO-220

Applications

  • Consumer
  • Power Adapters
  • Low Power SMPS
  • Lighting
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Carrier TypeMounting TypeTemp. Range (°C)Country of AssemblyCountry of Wafer Fabrication
TP70H130G4PPSActiveAvailableOut of StockRoHS:EN
RoHS:JA
TO-2201ku | $1.4TUBESurface Mount-55 to +150°CCHINAJAPAN
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