Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Achieves increased efficiency in both hard-switched and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
Description
The TP65H480G4JSGB 650V 480mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H480G4JSGB is offered in an industry-standard PQFN56 with a common source package configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 480 |
| RDSON (max) (mΩ) | 560 |
| Vth typ (V) | 2.4 |
| Id max @ 25°C (A) | 3.6 |
| Qrr typ (nC) | 15.2 |
| Qg typ (nC) | 5 |
| Qoss (nC) | 11.6 |
| Ron * Qoss (FOM) | 5568 |
| Ciss (Typical) (pF) | 414 |
| Coss (Typical) (pF) | 7.93 |
| trr (Typical) (nS) | 17.6 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN56 | 5 x 6 |
Applications
- Consumer
- Power adapters
- Low-power SMPS
- Lighting