Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Enables AC-DC and DC-DC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
Description
The TP65H300G4LSG 650V 240mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H300G4LSG is offered in an industry-standard PQFN88 with a common source package configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 240 |
| RDSON (max) (mΩ) | 312 |
| Vth typ (V) | 2.1 |
| Id max @ 25°C (A) | 6.5 |
| Qrr typ (nC) | 23 |
| Qg typ (nC) | 9.6 |
| Qoss (nC) | 19 |
| Ron * Qoss (FOM) | 4560 |
| Ciss (Typical) (pF) | 760 |
| Coss (Typical) (pF) | 16 |
| trr (Typical) (nS) | 16 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN88 | 8 x 8 |
Application Block Diagrams
|
1.2kW High-Voltage GaN Inverter
Efficient high-voltage GaN inverter with GaN-based PFC for industrial motor drives.
|
Additional Applications
- Consumer
- Power adapters
- Low-power SMPS
- Lighting