Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with commonly used gate driver
- Kelvin source for improved performance
Description
The TP65H035G4YS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035G4YS is offered in an industry-standard TO-247-4 with a Kelvin source and common source package configuration.
Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor
| Part Number | Status | Samples | Stock | Package | Budgetary Price (USD) |
|---|---|---|---|---|---|
| TP65H035G4YS | NRND | N/A | In Stock | Package | 1ku | $4.65 |
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- White PaperPDF 1.9 MB R16WP0012EU0100 Rev.1.00 Dec 19, 2025D-Mode GaN combines the best of both GaN and Silicon and is ideal for high-voltage applications with high-speed, high-voltage GaN switching, robust 4V threshold gate compatible with standard gate drivers, and a range of standard package offerings not available with other GaN technologies.
- Technical BriefPDF 992 KB R16TB0004EU0100 Rev.1.00 Dec 02, 2025
- Application NotePDF 372 KB Dec 11, 2024AI-generated Summary: GaN power switches require careful PCB layout and probing techniques to fully utilize their fast switching capabilities. Minimizing parasitic inductances and capacitances in the power and gate drive loops reduces ringing and ensures stable operation. A large ground plane, close placement of power components, and short, wide traces in the gate drive circuit improve performance. Accurate probing demands short ground leads and direct probe placement to avoid measurement artifacts. Avoid adding parasitics during probing by using floating oscilloscopes and minimizing wire lengths. The document also highlights the importance of proper decoupling and grounding strategies for high-frequency switching circuits.
- Application NotePDF 3.39 MB Jan 17, 2024AI-generated Summary: The document details tape and reel packaging specifications for various PQFN packages by Renesas Electronics, including GEN III and GEN IV 8x8mm and 5x6mm sizes. It covers product orientation, carrier tape dimensions, reel sizes, box sizes, package PODs, laser marking samples, and shipping box information. The GEN III 8x8mm PQFN tape and reel includes 500 pieces per reel, with leader and trailer empty pocket lengths specified. Carrier tape dimensions follow EIA 481 standards with precise sprocket hole tolerances. Reel size is standardized at 178mm diameter. The document also includes detailed packaging and shipping information for TO-220, TO-247, and TOLL tape and reel formats.
- Application NotePDF 676 KB Jan 02, 2023AI-generated Summary: The document evaluates the DGD2304 high voltage, high speed half-bridge gate driver as a cost-effective solution for low- to mid-power GaN FET applications. It highlights the DGD2304’s compatibility with TTL/CMOS logic, 600 V bootstrap operation, internal deadtime to prevent shoot-through, and extended temperature range. The evaluation uses Transphorm’s 1200 W Buck/Boost kit and compares the DGD2304 to the higher-cost Si8230 driver. The document includes schematics and PCB layouts for daughter cards integrating the DGD2304, emphasizing its suitability for applications where isolation is unnecessary, such as power adapters and chargers. Design files like BOM, schematics, and Gerber files are bundled for reference.
- Application NotePDF 1.26 MB Apr 07, 2022AI-generated Summary: Recommendations focus on lead-free second-level soldering for PQFN88, PQFN56, and TO-263 packages using vapor phase reflow. Key points include PCB footprint design to ensure optimal thermal and electrical performance, solder pad surface finish selection favoring Electroless Ni/Immersion Au (ENIG) for superior solder wetting, and solder stencil specifications with preferred thickness around 127µm. Vias in drain or source pads improve thermal conduction. Detailed stencil aperture dimensions and solder mask openings support self-alignment during reflow soldering. The document guides on solder paste printing and reflow parameters to achieve reliable assembly.
- GuidePDF 225 KB Jul 14, 2017Related Files:
- PCB Design FilesZIP 2.7 MB Jul 11, 2017Related Files:
- GuidePDF 273 KB Jul 11, 2017Related Files:
Recommended Documents (1)
Datasheets (1)
- GuidePDF 225 KB Jul 14, 2017Related Files:
- GuidePDF 273 KB Jul 11, 2017Related Files:View More (6)
Manuals & Guides (6)
- White PaperPDF 1.9 MB R16WP0012EU0100 Rev.1.00 Dec 19, 2025D-Mode GaN combines the best of both GaN and Silicon and is ideal for high-voltage applications with high-speed, high-voltage GaN switching, robust 4V threshold gate compatible with standard gate drivers, and a range of standard package offerings not available with other GaN technologies.
- Application NotePDF 372 KB Dec 11, 2024AI-generated Summary: GaN power switches require careful PCB layout and probing techniques to fully utilize their fast switching capabilities. Minimizing parasitic inductances and capacitances in the power and gate drive loops reduces ringing and ensures stable operation. A large ground plane, close placement of power components, and short, wide traces in the gate drive circuit improve performance. Accurate probing demands short ground leads and direct probe placement to avoid measurement artifacts. Avoid adding parasitics during probing by using floating oscilloscopes and minimizing wire lengths. The document also highlights the importance of proper decoupling and grounding strategies for high-frequency switching circuits.
- Application NotePDF 3.39 MB Jan 17, 2024AI-generated Summary: The document details tape and reel packaging specifications for various PQFN packages by Renesas Electronics, including GEN III and GEN IV 8x8mm and 5x6mm sizes. It covers product orientation, carrier tape dimensions, reel sizes, box sizes, package PODs, laser marking samples, and shipping box information. The GEN III 8x8mm PQFN tape and reel includes 500 pieces per reel, with leader and trailer empty pocket lengths specified. Carrier tape dimensions follow EIA 481 standards with precise sprocket hole tolerances. Reel size is standardized at 178mm diameter. The document also includes detailed packaging and shipping information for TO-220, TO-247, and TOLL tape and reel formats.
- Application NotePDF 676 KB Jan 02, 2023AI-generated Summary: The document evaluates the DGD2304 high voltage, high speed half-bridge gate driver as a cost-effective solution for low- to mid-power GaN FET applications. It highlights the DGD2304’s compatibility with TTL/CMOS logic, 600 V bootstrap operation, internal deadtime to prevent shoot-through, and extended temperature range. The evaluation uses Transphorm’s 1200 W Buck/Boost kit and compares the DGD2304 to the higher-cost Si8230 driver. The document includes schematics and PCB layouts for daughter cards integrating the DGD2304, emphasizing its suitability for applications where isolation is unnecessary, such as power adapters and chargers. Design files like BOM, schematics, and Gerber files are bundled for reference.
- Application NotePDF 1.26 MB Apr 07, 2022AI-generated Summary: Recommendations focus on lead-free second-level soldering for PQFN88, PQFN56, and TO-263 packages using vapor phase reflow. Key points include PCB footprint design to ensure optimal thermal and electrical performance, solder pad surface finish selection favoring Electroless Ni/Immersion Au (ENIG) for superior solder wetting, and solder stencil specifications with preferred thickness around 127µm. Vias in drain or source pads improve thermal conduction. Detailed stencil aperture dimensions and solder mask openings support self-alignment during reflow soldering. The document guides on solder paste printing and reflow parameters to achieve reliable assembly.
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- PCB Design FilesZIP 2.7 MB Jul 11, 2017Related Files:
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