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Renesas Electronics Corporation

Features

  • Product portfolio with two different UVLO (Under Voltage Lock Out) characteristics
    • RV1S9991A: VUVLO = 9.6V Max.
    • RV1S9992A: VUVLO = 13.4V Max.
  • Long creepage distance (15mm Min., LSDIP8 package)
  • Peak output current (4A Max.)
  • High speed switching (tPLH, tPHL = 95ns Max.)
  • Pulse width distortion (|tPLH-tPHL| = 35ns Max.)
  • High common mode transient immunity (|CMH|,|CML| = 100kV/μs Min.)
  • Operating ambient temperature (125°C Max.)
  • High isolation voltage (BV = 7500 Vr.m.s.)
  • Embossed tape product
    • RV1S9991ACCSP-10Yx#KC0: 1000 pcs/reel
    • RV1S9992ACCSP-10Yx#KC0: 1000 pcs/reel
  • Pb-free product
  • Safety standard
    • UL: UL1577, double protection
    • VDE: DIN EN IEC 60747-5-5, DIN EN IEC 62368-1, reinforced insulation (option)

Description

The RV1S9991A and RV1S9992A are optically coupled isolators containing an AlGaAs LED on the input side and a photodiode with a signal‑processing circuit and power MOSFETs integrated into a single chip on the output side. These devices are designed specifically for high common‑mode transient immunity (CMTI), high‑speed switching, and high‑temperature operation up to TA = 125 °C. They are suitable for driving IGBT, GaN FET, SiC FET, and Si power MOSFET gate drives.

Parameters

AttributesValue
Parametric SubcategoryIGBT Drive
Channels (#)1
Peak Output Current IPK (A)4
Supply Voltage (V)10 - 30
Isolation Voltage (Vrms)7500
Temp. Range (°C)-40 to +125
DC IFLH max. (mA)8
SW tPLH, tPHL max. (ns)95
SW PWD max. (ns)35
SW PDD max. (ns)35
CMTI min. (kV/µs)100
UVLOYes
CLAMPNo
DesatNo
Creepage Distance (mm)15
Safety Standard UL (UL1577)Approved
Safety Standard VDE (EN IEC 60747-5-5)Approved

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
LSDIP86.7 x 13.8 x 3.958

Product Comparison

RV1S9992ARV1S9991A
Channels (#)11
Isolation Voltage (Vrms)75007500
Supply Voltage10 - 3010 - 30
CMTI min. (kV/µs)100100
VCC-VEE (Max) (V)3535

Applied Filters: