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Features

  • Single 3V supply: 2.4V to 3.6V
  • Access time:
    • Power supply voltage from 2.7V to 3.6V: 45ns (max.)
    • Power supply voltage from 2.4V to 2.7V: 55ns (max.)
  • Current consumption: Standby: 0.45µA (typ.)
  • Equal access and cycle times
  • Common data input and output: Three-state output
  • Directly TTL compatible: All inputs and outputs
  • Battery backup operation

Description

The RMLV0816BGBG is an 8-Mbit static RAM organized as 524, 288-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0816BGBG realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-ball fine-pitch ball grid array.

Parameters

AttributesValue
Memory Density8
Organization512K x 16
Access Time (ns)45
Supply Voltage (V)2.4 - 3.6
Temp. Range (°C)-40 to +85

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
FBGA(48)8 x 8 x 1.248
Part NumberStatusSamplesStockPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
RMLV0816BGBG-4S2#AC0ActiveAvailableIn StockTFBGA1ku | $10.95Tray3CHINA, JAPAN, TAIWANJAPAN
RMLV0816BGBG-4S2#KC0ActiveN/AOut of StockTFBGA1ku | $10.95Embossed Tape3CHINA, JAPAN, TAIWANJAPAN
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